• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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    • 专利摘要:
    An optoelectronic device (10) comprising a matrix of light-emitting diodes (16) and photoluminescent blocks (40) facing at least a portion of the light-emitting diodes, each light-emitting diode having a lateral dimension ( D1) less than 30 μm, each photoluminescent block comprising semiconductor crystals whose average size is less than 1 μm dispersed in a binder matrix.
    公开号:FR3028672A1
    申请号:FR1461099
    申请日:2014-11-18
    公开日:2016-05-20
    发明作者:Ivan-Christophe Robin；Hubert Bono；Alain Fargeix；Ricardo Izquierdo；Calvez Stephanie Le；Audrey Sanchot
    申请人:Commissariat a lEnergie Atomique CEA；Alcatel Lucent SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present application relates to an optoelectronic device, in particular a display screen or an image projection device, with light-emitting diodes based on semiconductor materials and their manufacturing processes. BACKGROUND OF THE INVENTION DESCRIPTION OF THE PRIOR ART Optoelectronic devices comprising semiconductor-based light-emitting diodes comprising a semiconductor layer stack comprising mainly at least one group III element and a group V element, hereinafter referred to as a compound III, V, in particular gallium nitride (GaN), gallium indium nitride (GaInN) and gallium aluminum nitride (GaAlN). Current commercially available GaN light-emitting diodes are suitable for emitting ultraviolet or blue light. It is known that increasing the proportion of indium in GaInN makes it possible to increase the wavelength of the emitted radiation. However, when the proportion of indium rises above 20% by weight, the quantum yield of the light emitting diode greatly decreases. It is known to coat a light-emitting diode with a layer of photoluminescent materials to convert at least a portion of the radiation emitted by the light-emitting diode into radiation at another wavelength. An example of a photoluminescent material is yttrium aluminum garnet (YAG), activated by the trivalent cerium ion, also called YAG: Ce or YAG: Ce3 +. The average particle size of conventional photoluminescent materials is generally greater than 5 μm.
    [0002] An optoelectronic device, such as a display screen or a projection device, based on light-emitting diodes may comprise a matrix of display pixels emitting red, green or blue light, each display pixel comprising at least an electroluminescent diode. To obtain display pixels emitting red or green light, one possibility is to provide a matrix of light-emitting diodes emitting blue light and to cover some of these light-emitting diodes with a photoluminescent material adapted to convert the blue light to light. red or green. There is a tendency to reduce the dimensions of the display pixels, in particular to increase the resolution of the display screens or projection devices. The lateral dimensions of the light-emitting diodes may then be less than 30. However, the thickness of the photoluminescent material, such as YAG: Ce3 +, must be greater than several hundred microns to convert all of the light radiation provided by a light-emitting diode. A disadvantage is that the use of these photoluminescent materials is not compatible with the production of electroluminescent diodes of small lateral dimensions. SUMMARY An object of an embodiment is to overcome some or all of the disadvantages of the optoelectronic light-emitting diode devices described above.
    [0003] Another object of an embodiment is that the light-emitting diodes comprise a stack of semiconductor layers predominantly comprising a III-V compound. Another object of one embodiment is that the lateral dimensions of the light emitting diodes are less than 30 μm. Another object of an embodiment is that the optoelectronic device comprises an array of display pixels each emitting green, red or blue light.
    [0004] Thus, an embodiment provides an optoelectronic device comprising a matrix of light emitting diodes and photoluminescent blocks facing at least a portion of the light emitting diodes, each light emitting diode having a side dimension of less than 15 μm, each photoluminescent block comprising semiconductor crystals, the average size of which is less than 1 μm, dispersed in a binder matrix. According to one embodiment, each photoluminescent block has a thickness of less than 50 μm, preferably less than 5 μm. According to one embodiment, the average size of the semiconductor crystals is less than 500 nm, preferably less than 50 nm. According to one embodiment, the semiconductor crystals are at least one material selected from the group consisting of cadmium selenide, indium phosphide, cadmium sulphide, zinc sulphide, zinc selenide, cadmium telluride, zinc telluride, cadmium oxide, zinc and cadmium oxide, zinc and cadmium sulphide, zinc and cadmium selenide, silver and indium sulphide and a mixture of at least two of these compounds. According to one embodiment, the binder matrix is an at least partially transparent polymer.
    [0005] According to one embodiment, each light emitting diode comprises a stack of semiconductor portions. According to one embodiment, the device comprises a grid delimiting openings located opposite the light-emitting diodes, the photoluminescent blocks being arranged in some of the openings. According to one embodiment, each photo-luminescent block is laterally surrounded by a reflecting wall.
    [0006] According to one embodiment, the device comprises a first electronic circuit comprising the light-emitting diodes and a second electronic circuit fixed to the first electronic circuit by direct bonding and electrically connected to the light-emitting diodes.
    [0007] An embodiment also provides a method of manufacturing an optoelectronic device comprising the steps of: (a) luminescent formation, each lateral dimension less than 30 gm; and (b) forming photoluminescent blocks vis-à-vis a matrix of electroluminescent diode electrodes having at least a portion of the light-emitting diodes, each photoluminescent block comprising semiconductor crystals having an average size of less than to 1 pin, dispersed in a binder matrix. According to one embodiment, each photo-luminescent block has a thickness of less than 30 μm, preferably less than 5 μm. According to one embodiment, step (a) comprises the fabrication of an optoelectronic circuit comprising light emitting diodes and step (b) comprises the formation of photoluminescent blocks by an additive process on the optoelectronic circuit.
    [0008] According to one embodiment, step (b) comprises the formation of photoluminescent blocks by three-dimensional printing on the optoelectronic circuit. According to one embodiment, step (a) comprises the fabrication of an optoelectronic circuit comprising light emitting diodes and step (b) comprises the formation of non-through apertures in a substrate, the formation of photoluminescent blocks in some of the openings, attachment of the substrate to the optoelectronic circuit, and thinning of the substrate to expose the photoluminescent blocks. BRIEF DESCRIPTION OF THE DRAWINGS These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying figures in which: FIGS. 1 and 2 are partial sectional and schematic views of embodiments of an optoelectronic device; FIGS. 3A to 3J are sectional, partial and schematic views of structures obtained at successive stages of an embodiment of a method of manufacturing the optoelectronic device shown in FIG. 1; FIGS. 4A and 4B are sectional, partial and schematic views of structures obtained at steps of an embodiment of a method of manufacturing the optoelectronic device shown in FIG. 2; and FIG. 5 is a schematic partial sectional view of the structure obtained at a step of another embodiment of a method of manufacturing the optoelectronic device shown in FIG. 1. Detailed Description For the sake of clarity, FIG. The same elements have been designated with the same references in the various figures and, moreover, as is customary in the representation of the integrated circuits, the various figures are not drawn to scale. In addition, in the remainder of the description, the terms "substantially", "about" and "approximately" mean "to within 10%". In addition, only the elements useful for understanding the present description have been shown and are described. In particular, the polarization means of a light emitting diode of an optoelectronic device are well known and are not described. In the remainder of the description, the "active zone" of a light-emitting diode is the region of the light-emitting diode 10 from which the majority of the electromagnetic radiation supplied by the light-emitting diode is emitted. Furthermore, the term "particle" as used in the context of the present application is to be understood in a broad sense and corresponds not only to compact particles having more or less a spherical shape but also to angular particles, flattened particles, flake-shaped particles, fiber-shaped particles, or fibrous particles, etc. It will be understood that the "size" of the particles in the context of the present application means the smallest transverse dimension of the particles. By particles of a material is meant particles taken individually, that is to say the unitary elements of the material, knowing that the material may be in the form of agglomerates of particles. By the term "average size" of particles is meant according to the present application the arithmetic mean of the particle sizes, i.e. the sum of the particle sizes divided by the number of particles. Particle size can be measured by laser granulometry using, for example, a Malvern Mastersizer 2000.
    [0009] FIG. 1 shows an embodiment of an optoelectronic device 10, corresponding, for example, to a display screen or to an image projection device. The device 10 comprises two integrated circuits 12, 14. The first integrated circuit 12 comprises electro-luminescent diodes 16 and is called optoelectronic circuit or optoelectronic chip in the following description. The second integrated circuit 14 comprises electronic components, not shown, in particular transistors, used for the control of the light-emitting diodes 16 of the first integrated circuit 12.
    [0010] The second integrated circuit 14 is called control circuit or control chip in the following description. The optoelectronic circuit 12 is fixed to the control circuit 14. Depending on the type of fixing, inserts may possibly be present between the optoelectronic chip 12 and the control chip 14.
    [0011] According to one embodiment, each light-emitting diode 16 comprises a stack of semiconductor layers each containing in majority at least one III-V compound. According to a first example, the light-emitting diodes 16 have the structure described in the patent application FR14 / 50077 which is considered to be an integral part of the present description in which the light-emitting diodes 16 are in common cathode. In a second example, the light-emitting diodes 16 have the structure described in the publication titled "III-nitride micro-emitter arrays: 20 development and applications" in the names of Z.Y. Fan, J.Y. Lin, and H.X. In one embodiment, the optoelectronic circuit 12 includes a semiconductor layer 18 having opposite and parallel faces 20 and 22. The light-emitting diodes 16 rest on the face 20 of the layer 18. The layer 18 is for example a highly doped semiconductor layer of a first type of conductivity, for example of the N-type. The layer 18 is, for example, a compound III-V, especially a III-N compound. Examples of III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN. The thickness of the layer 18 may be between 500 nm and 50 μm, preferably between 1 μm and 6 μm. Each light emitting diode 16 comprises a stack of semiconductor layer portions comprising, from the bottom upwards in FIG. 1: B13595 - DD15612 8 a doped semiconductor portion 24 of the first type of conductivity, for example doped N type, in contact with the face 20 of the layer 18; an active area 26; and a doped semiconductor portion 28 of a second conductivity type opposite to the first conductivity type, for example doped P-type. According to another embodiment, the semiconductor layer 18 may not be present.
    [0012] According to one embodiment, the active zone 26 and the semiconductor portions 24 and 28 each mainly comprise at least one III-V compound, especially a III-N compound. Examples of III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN. Other group V elements may also be used, for example, phosphorus or arsenic. In general, the elements in compound III-V can be combined with different mole fractions. The active zone 26 and the semiconductor portions 24 and 28 may each comprise a dopant.
    [0013] Active zone 26 may comprise a single quantum well. It may then comprise a semiconductor material different from the semiconductor material forming the semiconductor portions 24 and 28 and having a band gap smaller than that of the semiconductor portions 24 and 28. The active area 26 may comprise multiple quantum wells. It then comprises a stack of semiconductor layers forming an alternation of quantum wells and barrier layers. The thickness of the semiconductor portion 24 may be between 0.1 and 20 gm. The thickness of the semiconductor portion 28 may be between 50 nm and 20 gm. The thickness of the active zone 26 may be between 10 nm and 500 nm. The width D1 of each light emitting diode 16 may be less than 30 gm, preferably 5 fun to 30 gm. For each light emitting diode 16, an electrically conductive portion 35 covers the semiconductor portion 28. The conductive portions 30 are, for example, aluminum or silver. The thickness of each conductive portion 30 is, for example, between 3 nm and 400 nm. Connection members 32, formed in a stack of insulating layers, electrically connect the conductive portion 30 to the control chip 14. Conductive portions 34 of the control chip 14 in contact with the connecting members 32 are shown in FIG. For each light-emitting diode 16, the lateral flanks of the semiconductor portion 28, the active zone 26 and at least a portion of the semiconductor portion 24 are covered with an insulating portion 36. The thickness of each insulating portion 36 may be chosen such that these portions 36 have an acceptable leakage current on each of the light-emitting diodes 16. Electrically conductive blocks 38 are provided between the light-emitting diodes 16. The blocks 36 are electrically isolated from the semiconductor portions 28 and the active areas 26 electroluminescent diodes by the insulating portions 36. The conductive blocks 38 are in contact of the face 20 of the layer 18. The blocks 38 may, in addition, be in contact with a portion of the semiconductor portions 24. Connection elements, via connecting elements similar to the connection elements 32 and 34 and not shown electrically connect the conductive blocks 38 to the control chip 14. The optoelectronic chip 12 comprises photoluminescent blocks 40 on the face 22 of the layer 18 vis-à-vis at least some light-emitting diodes 16. The width D2 Each photoluminescent block 40 may be substantially the same as the width D1 of each light-emitting diode 16, i.e. less than 30 μm, preferably 5 μm to 30 μm. The thickness E of each photoluminescent block 40 is less than 50 gm, preferably less than 30 gm, more preferably less than 5 gm, even more preferably between 0.1 pin and 5 gm, for example about 1 gm.
    [0014] Each photoluminescent block 40 comprises a matrix in which monocrystalline particles of nanometric size of a semiconductor material, also called semiconductor nanocrystals, are dispersed thereafter. The internal quantum efficiency QYint of a photoluminescent material is equal to the ratio between the number of photons emitted and the number of photons absorbed by the photoluminescent substance. The internal quantum yield QYint of the semiconductor nanocrystals is greater than 5%, preferably greater than 10%, more preferably greater than 20%. According to one embodiment, the average size of the nanocrystals is between 0.5 nm and 1000 nm, preferably between 0.5 nm and 500 nm, more preferably between 1 nm and 100 nm, especially between 2 nm and 30 nm. . For dimensions less than 50 nm, the photoconversion properties of the semiconductor nanocrystals depend essentially on quantum confinement phenomena. The semiconductor nanocrystals then correspond to quantum boxes. According to one embodiment, the semiconductor material 20 of the semiconductor nanocrystals is chosen from the group comprising cadmium selenide (CdSe), indium phosphide (InP), cadmium sulphide (CdS), zinc sulphide (ZnS ), zinc selenide (ZnSe), cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium oxide (CdO), zinc and cadmium oxide (ZnCdO), sulphide zinc and cadmium (CdZnS), zinc and cadmium selenide (CdZnSe), silver and indium sulfide (AgInS2) and a mixture of at least two of these compounds. According to one embodiment, the semiconductor material of the semiconductor nanocrystals is selected from the materials cited in the publication in the name of Le Blevenec et al. of Physica Status Solidi (RRL) - Rapid Research Letters Volume 8, No. 4, pages 349-352, April 2014. According to one embodiment, the dimensions of the semiconductor nanocrystals are chosen according to the desired wavelength of the emitted radiation. by the nanocrystals 30 semiconductors 3028672 B13595 - DD15612 11. By way of example, CdSe nanocrystals whose average size is of the order of 3.6 nm are adapted to convert blue light to red light and CdSe nanocrystals whose average size is of the order of 1.3 nm are suitable for converting blue light to green light. According to another embodiment, the composition of the semiconductor nanocrystals is chosen according to the desired wavelength of the radiation emitted by the semiconductor nanocrystals. The matrix is made of at least partially transparent material. The matrix is, for example, silica. The matrix is, for example, any plastic material at least partially transparent, especially an at least partially transparent polymer, especially silicone or polyacetic acid (PLA). The matrix may be an at least partially transparent polymer used with three-dimensional printers, such as PLA. According to one embodiment, the matrix contains from 2% to 90%, preferably from 10% to 60% by weight of nanocrystals, for example about 20% by weight of nanocrystals. The medium comprising the matrix and the semiconductor nanocrystals has an absorption coefficient greater than 103 cm -1. Semiconductor nanocrystals are direct bandgap materials whereas conventional photoluminescent materials, such as YAG: Ce3 +, are indirect bandgap materials. Therefore, although the internal quantum efficiency of semiconductor nanocrystals is lower than the internal quantum efficiency of conventional photoluminescent materials, such as YAG: Ce3 +, the thickness of the photoluminescent blocks 40 may be less than 30 μm, and preferably less than 30 μm. at 5-pin because the conversion time is shorter. The thickness of the photoluminescent blocks 40 depends on the concentration of the nanocrystals and the type of nanocrystals used. FIG. 2 shows another embodiment of an optoelectronic device 50 comprising all the elements 35 of the optoelectronic device 10 and further comprising a gate 52 resting on the face 22 of the layer 18. The grid 52 comprises a network of walls 54 which define openings 56, each opening 56 being situated opposite a light-emitting diode 16. The photoluminescent blocks 40 are arranged in some of the openings 56. The grid 52 can be made of an insulating, semiconductor or conductive material. By way of example, the gate 52 is made of silicon. According to one embodiment, the side walls of the walls 54 are covered with a coating 58 adapted to reflect the radiation emitted by the photoluminescent blocks 40. The coating 58 is, for example, an aluminum film having a thickness between 10 nm and 2 pin. This advantageously makes it possible to improve the contrast of the display device by preventing the radiation emitted by a light-emitting diode 15 from reaching the photoluminescent block associated with an adjacent light-emitting diode. FIGS. 3A to 3J illustrate an embodiment of a method of manufacturing the optoelectronic device 10 shown in FIG. 1 in which the method for forming the light-emitting diodes corresponds to that described in the patent application FR14 / 50077. FIG. 3A shows the structure obtained after having formed on a substrate 60, a stack of semiconductor layers from which the light-emitting diodes 16 will be made, the conductive portions 30 on the stack and dielectric portions 62 on the conductive portions 30. The substrate 60 may correspond to a one-piece structure or correspond to a layer covering a support made of another material, for example glass or metal. The substrate is, for example, a semiconductor substrate, such as a silicon, germanium, silicon carbide, III-V compound, such as GaN or GaAs, to a II-VI compound, such as ZnO. Preferably, the substrate is made of silicon, in particular monocrystalline silicon or polycrystalline silicon. The substrate 60 is, for example, an insulating substrate, for example a sapphire substrate.
    [0015] The stack comprises, from bottom to top in FIG. 3A: an N-type doped semiconductor layer 64, for example based on GaN, which comprises a first more heavily doped part forming the semiconductor layer 18, covering the substrate 60, and covered with a less heavily doped portion forming an N-doped semiconductor layer 66. Alternatively, the two layers 18 and 66 may correspond to two layers of different materials, for example the layer 18 may be GaN-based and the layer 66 may be InGaN-based. In addition, that the two layers 18 and 66 correspond to two layers of different materials or to a single layer of the same material, the doping levels of the two layers 18 and 66 may be similar or not; Active layers 68 corresponding to an alternating stack of one or more quantum well emissive layers, for example based on InGaN, and barrier layers, for example based on GaN; a semiconductor layer 70, for example GaN, p-type doped. The conductive portions 30 are, for example, produced by a deposition of a layer of electrically conductive material, for example aluminum or silver, followed by lithography and engraving.
    [0016] The conductive portions 30 and the dielectric portions 62 each have a shape and dimensions, in the plane of the upper face of the semiconductor layer 70 on which they are made, substantially similar to those desired for the light-emitting diodes 16, and for example A disc-shaped section. FIG. 3B shows the structure obtained after having etched the semiconductor layer 70, the active layers 68, and a first part of the semiconductor layer 66 in the pattern defined by the dielectric portions 62, forming, for each light-emitting diode 16, a structure mesa, for example of cylindrical form, comprising the active zone 26 disposed between the semiconductor portions 24 and 28. This etching is stopped at a depth level located in the semiconductor layer 66 such as a portion of the layer 66 is kept at the bottom of each of the etched areas of the stack. The etching step forms, between the light-emitting diodes 16, empty spaces 72 which subsequently serve for the production of a cathode common to the light-emitting diodes 16. The etching used is a dry etching, for example via an electroluminescent diode 16. C12-based plasma or reactive ion etching (RIE). FIG. 3C shows the structure obtained after conformally depositing a dielectric layer 74, for example based on SiN, for example between about 3 nm and 100 nm, on the dielectric portions 62 and along the walls of the void spaces. 72, and thus covering in particular the sidewalls of the conductive portions 30, the semiconductor portions 28, the active zones 26 and a portion of the semiconductor portions 24.
    [0017] FIG. 3D shows the structure obtained after having carried out anisotropic etching, for example a dry etching, so as to remove the portions of the dielectric layer 74 located at the bottom of the empty spaces 74 and on the dielectric portions 62. The dielectric portions 36 are thus obtained. FIG. 3E represents the structure obtained after having etched the rest of the semiconductor layer 66 at the bottom of the empty spaces 72 to the semiconductor layer 18, after having etched the dielectric portions 62.
    [0018] FIG. 3F shows the structure obtained after having deposited an electrically conductive material 78 which fills the empty spaces 72 and covers the light-emitting diodes 16. By way of example, the conductive material 78 is formed by the deposition of a first layer of titanium thickness for example equal to about 10 nm, followed by a deposit of a second aluminum layer of thickness for example equal to about 1 gm. FIG. 3G represents the structure obtained after carrying out a planarization step, such as a chemical mechanical planarization (CMP), and / or an etching step, such as an RIE etching, of the electrically conductive material 78 until to reach the upper faces of the conductive portions 30 and the dielectric portions 76. The remaining portions of the conductive material 136 disposed between the light-emitting diodes 16 correspond to the conductive blocks 38. FIG. 3H shows the structure obtained after having formed the connection elements 32 in contact with the conductive portions 30 and the conductive blocks 38. FIG. 31 shows the structure obtained after having fixed the control chip 14 to the optoelectronic chip 12 on the side of the connection elements 32. The attachment of the control chip 14 to the optoelectronic chip 12 can be made by direct bonding, without the use of inserts such as microbeads of connection. The direct bonding may comprise direct metal-to-metal bonding of the metal zones 32 of the optoelectronic chip 12 and metal zones 34 of the control chip 14 and a dielectric-dielectric bonding of the dielectric zones on the surface of the optoelectronic chip 12 and the dielectric areas on the surface of the control chip 14. The attachment of the control chip 14 to the optoelectronic chip 12 can be achieved by a thermocompression process in which the optoelectronic chip 12 is pressed against the control chip 14 with application of pressure and with heating. FIG. 3J shows the structure obtained after removing the substrate 60 so as to expose the face 22 of the semiconductor layer 18. When the substrate is made of a semiconductor material, the substrate 60 can be removed by a planarization step, such that a chemical mechanical planarization (CMP), and / or an etching step, such as an RIE etching. When the substrate 60 is of an insulating material such as sapphire, the substrate 60 can be removed by laser ablation. The following steps of the manufacturing method include the steps of forming the semiconductor nanocrystals blocks 40 on the face 22 of the semiconductor layer 12 so as to obtain the structure of the optoelectronic device 10 as shown in FIG. a colloidal dispersion of the semiconductor nanocrystals in a binder matrix, the formation of blocks 40 of the colloidal dispersion on the face 22 of the semiconductor layer 18 and the drying of the blocks 40. The method of forming the blocks 40 may correspond to a additive process, for example by direct printing of the colloidal dispersion at the desired locations, for example by ink jet printing, heliography, screen printing, flexography, spray coating or droplet deposit drop-casting). According to one embodiment, the light-emitting blocks 40 are made by three-dimensional printing. The desired dimensions of the semiconductor nanocrystal blocks 40 are compatible with the resolution of the currently available three-dimensional printers. Three-dimensional printing can be accomplished using piezoelectric injection nozzles. For example, the holes of the injection nozzles may be arranged in staggered rows. The colloidal dispersion can be heated to be injected at the desired viscosity by the injection nozzles. The optoelectronic chip 12 may further be heated during the printing step. The matrix of the colloidal dispersion may be a resin which is polymerized after the colloidal dispersion has been deposited by printing. By way of example, the polymerization of the matrix can be obtained by exposing the photoluminescent blocks 40 to electromagnetic radiation, especially ultraviolet radiation.
    [0019] The method of forming the blocks 40 may correspond to a so-called subtractive process, in which the colloidal dispersion is deposited on the entire face 22 of the layer 18 and in which the unused portions are then removed, by For example by photolithography or laser ablation. Depending on the material under consideration, the deposition on the entire structure can be carried out by spin coating, spray coating, heliography, slot-die coating, blade-coating. ), 10 flexography or screen printing. FIGS. 4A and 4B show the structures obtained at steps of an embodiment of a method of manufacturing the optoelectronic device 50 shown in FIG.
    [0020] The initial steps of the process are those previously described in connection with FIGS. 3A-3J. FIG. 4A shows the structure obtained after etching, in a substrate 80, non-through apertures 82 which are intended to be placed vis-à-vis the light-emitting diodes 16 and after covering the lateral walls of the openings 82 with a reflective coating 84, for example an aluminum film. The dimensions of the openings 82 correspond to the desired dimensions of the blocks 40 of semiconductor nanocrystals. The reflective coatings 84 may be formed by deposition of a metal layer over the entire substrate 80 and anisotropic etching of the metal layer to retain the metal coating 84 only on the sidewalls of the openings 82. FIG. the structure obtained after having formed the blocks 40 of semiconductor nanocrystals in at least some of the openings 82 and after having fixed the substrate 80 to the optoelectronic chip 12. The photoluminescent blocks 40 may be formed by filling certain openings 82 with the colloidal dispersion of the semiconductor nanocrystals, for example by an additive process, possibly by plugging certain openings 82 with resin. Fixing the substrate 80 to the optoelectronic chip 12 can be achieved by direct bonding or by thermocompression. The following steps of the method of manufacturing the optoelectronic device 50 include thinning the substrate 80 from the side of the substrate 90 opposite the light emitting diodes 16 to expose the semiconductor nanocrystals blocks 40. Thinning can be achieved by mechanical and chemical planarization. The structure 10 shown in FIG. 2 is then obtained. FIG. 5 represents the structure obtained at a step of another embodiment of the method of manufacturing the optoelectronic device 10 or 50 in which the step of fixing the optoelectronic chip 12 to the control chip 14 15 implements inserts 90 between the two chips 12 and 14. By way of example, the inserts 90 may comprise carbon nanotubes. Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, although in the embodiments described above, the optoelectronic chip 12 is directly attached to the control chip 14, the optoelectronic chip 12 and the control chip 14 may each be attached to a printed circuit.
    权利要求:
    Claims (14)
    [0001]
    REVENDICATIONS1. Optoelectronic device (10; 50) comprising a matrix of light-emitting diodes (16) and photoluminescent blocks (40) facing at least a portion of the light-emitting diodes, each light-emitting diode having a lower lateral dimension (D1) at 30 pin, each photoluminescent block comprising semiconductor crystals, the average size of which is less than 1 pin, dispersed in a binder matrix.
    [0002]
    An optoelectronic device according to claim 10, wherein each photoluminescent block (40) has a thickness (E) of less than 50 μm, preferably less than 5 μm.
    [0003]
    Optoelectronic device according to claim 1 or 2, wherein the average size of the semiconductor crystals is less than 500 nm, preferably less than 50 nm. 15
    [0004]
    An optoelectronic device according to any one of claims 1 to 3, wherein the semiconductor crystals are at least one material selected from the group consisting of cadmium selenide (CdSe), indium phosphide (InP), cadmium sulphide (CdS), zinc sulphide (ZnS), zinc selenide (ZnSe), cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium oxide (CdO), zinc and cadmium oxide (ZnCdO), zinc and cadmium sulphide (CdZnS), zinc and cadmium selenide (CdZnSe), silver and indium sulphide (AgInS2) and a mixture of at least two of these compounds.
    [0005]
    Optoelectronic device according to any one of claims 1 to 4, wherein the binder matrix is an at least partially transparent polymer.
    [0006]
    Optoelectronic device according to any one of claims 1 to 5, wherein each light emitting diode (16) comprises a stack of semiconductor portions (24, 26, 28).
    [0007]
    Optoelectronic device according to any one of claims 1 to 6, comprising a gate (52) delimiting openings (82) facing the light-emitting diodes (16), the photoluminescent blocks (16), 40) being arranged in some of the openings.
    [0008]
    An optoelectronic device according to any one of claims 1 to 7, wherein each photoluminescent block (40) is laterally surrounded by a reflective wall (84).
    [0009]
    Optoelectronic device according to any one of claims 1 to 8, comprising a first electronic circuit (12) comprising the light-emitting diodes (16) and a second electronic circuit (14) fixed to the first electronic circuit by direct bonding and electrically connected to the electroluminescent diodes.
    [0010]
    A method of manufacturing an optoelectronic device (10; 50) comprising the steps of: (a) forming an array of light-emitting diodes (16), each light-emitting diode having a lateral dimension (D1) of less than 30 fun; and (b) forming photoluminescent blocks (40) vis-a-vis at least a portion of the light-emitting diodes, each photoluminescent block comprising semiconductor crystals having an average size of less than 1 pin, dispersed in a binder matrix .
    [0011]
    The method of claim 10, wherein each photoluminescent block (40) has a thickness (E) of less than 30 to 30, preferably less than 5, p.
    [0012]
    The method of claim 10 or 11, wherein step (a) comprises fabricating an optoelectronic circuit (12) including light emitting diodes (16) and wherein step (b) comprises forming the blocks. photoluminescent (40) by an additive process on the optoelectronic circuit.
    [0013]
    The method of claim 12, wherein step (b) comprises forming the photoluminescent blocks (40) by three-dimensional printing on the optoelectronic circuit (12). 3028672 B13595 - DD15612 21
    [0014]
    The method of claim 10, wherein step (a) comprises manufacturing an optoelectronic circuit (12) including light emitting diodes (16) and wherein step (b) comprises forming apertures ( 82) through a substrate (80), forming the photoluminescent blocks (40) in some of the apertures, attaching the substrate to the optoelectronic circuit, and thinning the substrate to expose the photoluminescent blocks.
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    公开号 | 公开日
    FR3028672B1|2018-01-26|
    US20160141469A1|2016-05-19|
    EP3024030B1|2017-07-05|
    EP3024030A1|2016-05-25|
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    法律状态:
    2015-11-25| PLFP| Fee payment|Year of fee payment: 2 |
    2016-05-20| PLSC| Publication of the preliminary search report|Effective date: 20160520 |
    2016-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    2017-11-30| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1461099|2014-11-18|
    FR1461099A|FR3028672B1|2014-11-18|2014-11-18|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|FR1461099A| FR3028672B1|2014-11-18|2014-11-18|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|
    EP15194809.8A| EP3024030B1|2014-11-18|2015-11-16|Optoelectronic device with light emitting diodes and method of manufacturing the same|
    US14/944,293| US9711694B2|2014-11-18|2015-11-18|Optoelectronic device with light-emitting diodes|
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